In this work we used powder of Aluminum hydroxide AL(OH)3 and the solution of iodine as doping materials for two type of Arabic Gum(Talha and Hashab ) with different in concentration and doping rate. The samples were heated first then pressed to act as p-type sheet. The energy gap at Talha was 3 eV as maximum when doping rate was 0.8% and concentration was 0.8mg/L while Hashab the maximum energy gap was 2.199700 eV when the doping rate was 0.2% and concentration was 0.2 mg/L. These new materials for doping semiconductor Arabic Gum shows many interesting properties. Talha Gum get regular increasing of energy gap related to increase in concentration and doping rate. While the Hashab get the random increasing of Energy gap related to decrease in concentration and doping rate ; It was observed that the different concentration of the samples confirmed the reason for the band gap shifts in addition to active Aluminum properties that increased energy gap.
