It is not surprising because, at the time when the Silicon based technology is approaching its fundamental limits, any new candidate material to take over from Silicon is welcome, and graphene seems to offer an exceptional choice (Geim and Novoselov, 2007). Graphene’s potential for electronics is generally justified by citing high mobility and conductance of its charge carriers. Graphene has attracted attention as a high-mobility channel replacement for Si in MOSFETs for very high frequency applications. The novel linear band structure and truly 2-D transport properties of graphene will likely lead to a plethora of beyond CMOS device possibilities (Sanjay and Banerjee, 2010). Currently, there is great interest in graphene as a base material for Nanoelectromechanical systems (NEMS) (Geim). Graphene is also a fascinating material for THz applications with its strengths in atomic thickness, easy tunability and high kinetic inductance. The high stability, large surface area and environmentally friendly nature of graphene makes it a potential candidate for environmental applications such as water purification, toxic gas sensors and acidic gas capture (Edward et al., 2014).
