This study reports fabrication and characterization of Tin sulphide (SnS) based thin film solar cells. The solar cell was fabricated using simple two electrodes electro-deposition technique to deposit window layer; Zinc sulphide (ZnS) and absorber layer; Tin sulphide (SnS) thin films on an Indium doped Tin oxide (ITO) coated glass slide and Silver paste was paste on the absorber layer (SnS) as back contact of the cell. Thus, a device structure of glass/ITO/ZnS/SnS/Ag solar cells is obtained. The active region SnS/ZnS hetero-junction was characterized using X-Ray diffractometer to reveals the presence of these phases. The device area is 1 cm2 and was characterised using solar simulator at 1.5 AM with Keithley source metre coupled with interactive characterisation software to obtain both dark and illuminated I-V characteristic of the cell. From characteristic curves of the cell, the Voc is read to be 0.17 V; Isc to be -2.85x 10-8A; Vmax to be 0.06 V and Imax to be -1.21x10-8A. Thus, the fill factor (ff) was calculated to be 0.15 while the efficiency below 1 % was computed for the cell. The study therefore concludes that a SnS based thin film solar cell free of Cd is feasible and recommend further research to improve the efficiency of the cell.
