A study of the effects of SiN Treatment on the GaN Refractive Index
In the present study, both the GaN buffer layer approach and the sapphire SiN treatment method were used to develop GaN films by metalorganic chemical vapor deposition (MOCVD) on a c-plane (0001) sapphire substrate. The growth was controlled in situ by 632.8 nm laser reflectometry. The GaN-grown layer structure wasinvestigated via high-resolution X-ray diffraction (HRXRD). TheGaN structural properties improved upon SiN treatment.